Triple-Gate FinFETs for Very High Frequency Applications
(2013) Workshop on Advanced Materials and Devices - WAMD’13 — Location: University of Havana (Cuba) (13.March.2013)
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- Abstract
- This last decade silicon MOSFETs have demonstrated their potentialities for very high frequency applications. Thanks to the successful shrinkage of transistor size, cut-off frequencies (fT) in the order of 500 GHz have been achieved. In this scenario, the International Technology Roadmap of Semiconductors (ITRS) has established that the analog performance of the MOSFETs will continue growing as the channel length will be shrunk beyond a few nm [1]. Fig. 1 shows the projections of the cut-off frequency, according with the ITRS, for two technologies: Ultra Thin Body transistors (UTB) and Multiple-Gate Transistors (MuGFETs). As can be seen from Fig. 1, the projections on MuGFET indicate that fT will reach the THz range for technology nodes about 10 nm [1]. Nowadays, triple-gate FinFET transistors which exhibit high immunity against SCE [2] are promising candidates to pursue the downscaling of CMOS transistors beyond 22-nm node, emerging as a suitable MuGFET device. However, it has been also shown that, due to its tridimensional nature, FinFETs exhibit very large parasitic gate capacitance (Cgge), which is even higher than its intrinsic counterpart for sub-100 nm technology nodes [3]. As a consequence the transistor’s fT is dramatically reduced due to those fringing parasitic capacitances [4].
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Martinez-Lopez, A. G., Padron-Hernandez, W. Y., Salas, S., Alvarado, J., Tinoco, J. C., Raskin, J.-P., & Cerdeira, A. (2013). Triple-Gate FinFETs for Very High Frequency Applications. Proceedings of the Workshop on Advanced Materials and Devices - WAMD’13. Published. Workshop on Advanced Materials and Devices - WAMD’13, University of Havana (Cuba). https://hdl.handle.net/2078.5/228581