Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
(2024) Solid State Phenomena — Vol. 362, p. 83-88 (2024)
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- Abstract
- The total ionising dose (TID) reliability of a phosphorous pentoxide (P2O5) treated SiO2 (silicon dioxide) layer is compared for the first time to other industrially relevant oxides formed on 4H-silicon carbide (SiC). Metal-oxide-semiconductor capacitors (MOSCAPs) are characterised before and after irradiation to ascertain changes in flat band voltage shift, leakage current, and dielectric breakdown (BV). Secondary ion mass spectrometry (SIMS) profiling reveals a significant phosphorus concentration near the SiO2/SiC interface, which led to improved TID resistance. The P2O5 treated oxide had the lowest leakage current at high voltage bias due to the high-temperature (1,000°C) anneal, though it had a significantly negative flat band voltage due to the high concentration of deposited phosphorus atoms. The thermal and P2O5 oxides demonstrated a TID resistance, suffering only minor shifts in flat band voltage, while the P2O5 oxide suffered the smallest decrease in its BV and the smallest leakage current rise, post-irradiation.
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Kotagama, V., Renz, A. B., Kilchytska, V., Flandre, D., Qi, Y., Shah, V. A., Antoniou, M., & Gammon, P. M. (2024). Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications. Solid State Phenomena, 362, 83-88. https://doi.org/10.4028/p-4px5zX (Original work published 2024)