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Wideband characteristics of multigates MOS devices

Passi, V.;Raskin, Jean-Pierre
(2005) The Thirteenth International Workshop on the Physics of Semiconductor Devices - IWPSD-2005 — Location: New Delhi (India) (13.December.2005)

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In the past few years, there has been much hype in the research and characterization of various forms of novel devices to overcome the short channel effects (SCE) in single gate MOSFETs, to increase current drive, integration density, reduce power consumption and to scale the device according to the International Roadmap of the Semiconductor Industry Association (ITRS). Recently, besides the Silicon-on-Insulator (SOI), strained-Si, several types of multiple-gate devices have been proposed in the literature such as Double-Gate (DG), Triple-Gate (TG), FinFET’s, Pi-Gate (PG), Quadruple-Gate (QG), Omega-Gate (Ώ-G), etc. Some early research demonstrated the great interest of these multiple-gate devices in the subthreshold region. In the present work, results from simulations and wideband characterizations of multiple-gate devices are deeply analyzed and compared to the prediction of the ITRS for determining the position of such devices to the roadmap. To our knowledge, the potential of multiple-gate compared to single-gate devices is demonstrated for the first time in both static and dynamic operation regimes and from subthreshold to saturation regions. The high frequency behavior of the devices are analyzed based on the following key parameters: intrinsic gate-capacitances which comprise the gate-to-source capacitances (Cgs) and the gate-to-drain capacitances (Cgd), the ratio between the gate-to-source and gate-to-drain capacitances (Cgs/Cgd), transconductance (gm), cut-off frequency (fT) and the current gain (H21).
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Passi, V., & Raskin, J.-P. (2005). Wideband characteristics of multigates MOS devices. The Thirteenth International Workshop on the Physics of Semiconductor Devices - IWPSD-2005, paper 122. https://hdl.handle.net/2078.5/228597