The effect of a SiO2 interface on RF harmonic distortion in CPW lines on silicon or passivated silicon
(2008) The 8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF’08 — Location: Orlando, FL (USA) (23.January.2008)
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- Abstract
- Harmonic distortion (HD) is measured from coplanar waveguide (CPW) structures on various substrates at 900 MHz, and significant distortion for silicon substrates is demonstrated for the first time. For an input power of +35 dBm, 2nd and 3rd harmonic levels of -47 and -57 dBm, respectively, are measured for a thru calibration structure on oxidized high-resistivity silicon (HRS) substrates, and as high as -23 and -20 dBm, respectively, for longer lines and thinner oxides. These levels are high compared to a full cellular transmit switch product spec of -45 and -40 dBm for 2nd and 3rd harmonics, respectively, at similar power levels. The contribution of the silicon substrate to high harmonic levels is investigated experimentally, and an efficient technological solution based on the introduction of a trap-rich layer is demonstrated.
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Citations
Kerr, D. C., Gering, J. M., McKay, T., Carroll, S., Roda Neve, C., & Raskin, J.-P. (2008). The effect of a SiO2 interface on RF harmonic distortion in CPW lines on silicon or passivated silicon. The 8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems – SiRF’08, Orlando, FL (USA). https://hdl.handle.net/2078.5/228336