FinFET characterization up to 110 GHz
(2005) Uion Radio-Scientifique Internationale (U.R.S.I.) — Location: Palace of the Acadmies, Brussels (Belgium) (10.December.2004)
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- Abstract
- We propose in this work a detailed analysis of the analog performance of 50-nm gate length finFETs in dynamic regime up to 110 GHz.
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Citations
Lederer, D., Collaert, N., & Raskin, J.-P. (2005). FinFET characterization up to 110 GHz. Belgian Journal of Electronics and Communications (Revue HF Tijdschrift), 52-53. https://hdl.handle.net/2078.5/228490