High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications
(2021) European Solid-State Device Research Conference (ESSDERC 2021) — Location: Grenoble, France (13.September.2021)
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- Abstract
- This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and bias voltage. The purpose of this paper is to provide an overview of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.
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Citations
Courte, Q., Rack, M., Nabet, M., Cardinael, P., & Raskin, J.-P. (2021). High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications. European Solid-State Device Research Conference (ESSDERC 2021), Grenoble, France. https://hdl.handle.net/2078.5/237355