Ultra-low-power SOI CMOS pressure sensor based on orthogonal PMOS gauges

André, Nicolas;Delhaye, Thibault;Al Kadi Jazairli, Mohamad;Olbrechts, Benoit;Flandre, Denis;et.al.
(2017) 22nd IMEKO TC4 International Symposum & 20th International Workshop on ADC Modelling and Testing — Location: Iasi (Romania) (14.September.2017)

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Abstract
In this work, an ultra-low-power SOI CMOS pressure sensor is presented, using P-type MOSFET strain gauges to embed an active transducer in a 1 mm2 1.5 μm-thick membrane. The system demonstrates: (i) a maximum sensitivity of 700 ppm/mbar, (ii) a precision down to 2 mbars, (iii) a power consumption less than 10 μW for the PMOS transducer.
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André, N., Delhaye, T., Al Kadi Jazairli, M., Olbrechts, B., Gérard, P., Francis, L., Raskin, J.-P., & Flandre, D. (2017). Ultra-low-power SOI CMOS pressure sensor based on orthogonal PMOS gauges. 22nd IMEKO TC4 International Symposum & 20th International Workshop on ADC Modelling and Testing, Iasi (Romania). https://hdl.handle.net/2078.5/272171