Measurement of Intrinsic Gate Capacitances of Soi MosfetsFlandre, Denis;Vandewiele, F.;Jespers, PGA.;Haond, M.(1990) IEEE Electron Device Letters — Vol. 11, n° 7, p. 291-293 (1990)
FilesNo attached file found for this publication.DetailsAuthorsFlandre, DenisUCLouvainAuthorVandewiele, F.UCLouvainAuthorJespers, PGA.UCLouvainAuthorHaond, M.AuthorAffiliationsUCLouvainShow moreCitations APA Chicago FWB Flandre, D., Vandewiele, F., Jespers, PGA., & Haond, M. (1990). Measurement of Intrinsic Gate Capacitances of Soi Mosfets. IEEE Electron Device Letters, 11(7), 291-293. https://doi.org/10.1109/55.56478 (Original work published 1990)