Total-dose effects in double-gate-controlled NPN bipolar transistors
(2001) IEEE Transactions on Nuclear Science — Vol. 48, n° 5, p. 1694-1699 (2011)
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- Abstract
- The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar transistors has been investigated. The radiation hardness is improved when the device is working in the accumulation mode. The effect of positive charge and increased surface recombination velocity is analyzed by means of device simulations and experimental results
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Vandooren, A., Yuan, J.-G., Flandre, D., & Colinge, J.-P. (2001). Total-dose effects in double-gate-controlled NPN bipolar transistors. IEEE Transactions on Nuclear Science, 48(5), 1694-1699. https://doi.org/10.1109/23.960359 (Original work published 2011)