Unified 1/f noise SOI MOSFET modelling for circuit simulation

Iniguez, B.;Tambani, M;Dessard, V.;Flandre, Denis
(1997) Electronics Letters — Vol. 33, n° 21, p. 1781-1782 (1997)

Files

No attached file found for this publication.

Details

Authors
  • Iniguez, B.Rensselaer Polytech. Inst., Troy, NY
    Author
  • Tambani, M
    Author
  • Dessard, V.UCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
Abstract
The authors address the modelling of 1/f noise in SOI MOS devices for circuit simulation. A simple and unified model is presented which is valid for all operating regimes; it is verified by comparison with noise measurements. It is shown that this model is especially useful for low-power SOI MOS circuit design.
Affiliations

Citations