A physically-based C-infinity-continuous fully-depleted SOI MOSFET model for analog applications
(1996) IEEE Transactions on Electron Devices — Vol. 43, n° 4, p. 568-575 (1996)
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- Abstract
- An explicit physically-based fully-depleted SOI MOSFET model for all regions of operation is presented, Under quasistatic operation conditions analytical and C-infinity. Continuous equations are derived for all transistor large and small-signal parameters, Short-channel effects have been included, The calculated characteristics show good agreement with measurements and smooth transitions between regions of operation.
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Citations
Iniguez, B., Ferreira, L., Gentinne, B., & Flandre, D. (1996). A physically-based C-infinity-continuous fully-depleted SOI MOSFET model for analog applications. IEEE Transactions on Electron Devices, 43(4), 568-575. https://doi.org/10.1109/16.485539 (Original work published 1996)