Ac Capacitance and Conductance Measurements of 2-terminal Metal-oxide-semiconductor-oxide-semiconductor Capacitors On Silicon-on-insulator Substrates
(1991) Journal of Applied Physics — Vol. 70, n° 9, p. 5111-5113 (1991)
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- Abstract
- Results of combined ac capacitance and conductance measurements on two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors fabricated in a silicon-on-insulator substrate formed by oxygen implantation are presented for the first time. We demonstrate the efficiency of the technique to investigate the presence of bulk traps presumably caused by metallic contaminants introduced during the high-energy oxygen implantation, as well as to determine the interface trap density at the buried oxide/Si substrate interface.
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Flandre, D., Campabadal, F., Esteve, J., Loratamayo, E., & Vandewiele, F. (1991). Ac Capacitance and Conductance Measurements of 2-terminal Metal-oxide-semiconductor-oxide-semiconductor Capacitors On Silicon-on-insulator Substrates. Journal of Applied Physics, 70(9), 5111-5113. https://doi.org/10.1063/1.350338 (Original work published 1991)