Monolithically integrated 10 Gbit/s photodiode and transimpedance amplifier in thin-film SOICMOS technology

Afzalian, Aryan;Flandre, Denis
(2006) Electronics Letters — Vol. 42, n° 24, p. 1420-1421 (2006)

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The first monolithically integrated photodiode and transimpedance amplifier in ultra-thin-film SOI technology for 10 Gbit/s short-distance optical communication is presented. Results indicate performances compatible with the application, at very low power consumption, chip area and cost, using an all-silicon receiver in a 0.13 mu m SOI CMOS technology.
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Afzalian, A., & Flandre, D. (2006). Monolithically integrated 10 Gbit/s photodiode and transimpedance amplifier in thin-film SOICMOS technology. Electronics Letters, 42(24), 1420-1421. https://doi.org/10.1049/el:20062563 (Original work published 2006)