LDMOS in SOI technology with very-thin silicon film

Bawedin, Maryline;Flandre, Denis;Renaux, Christian
(2004) Solid-State Electronics — Vol. 48, n° 12, p. 2263-2270 (2004)

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In this paper, we extensively investigate, by two-dimensional simulations, the output characteristics accuracy and breakdown voltage performance for very-thin film (80 nm) SOI lateral double-diffused MOS (LDMOS) transistor as a function of the drift doping, drift length and field plate length. Trade-offs are discussed to optimize the off-state breakdown voltage versus the occurrence of kink effect and quasi-saturation in on-state. The conclusions are supported by experimental results. (C) 2004 Elsevier Ltd. All rights reserved.
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Bawedin, M., Flandre, D., & Renaux, C. (2004). LDMOS in SOI technology with very-thin silicon film. Solid-State Electronics, 48(12), 2263-2270. https://doi.org/10.1016/j.sse.2004.06.007 (Original work published 2004)