FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si : H photodiode
(2003) Microelectronics Reliability — Vol. 43, n° 2, p. 189-193 (2003)
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- Abstract
- In this paper we first present the integration of amorphous silicon photodiodes with a fully depleted silicon on isolator (FD SOI) MOSFET circuit. Taking the advantage of the better subthreshold characteristic of FD SOI MOSFETs with respect to bulk devices, a very simple SOI circuit integrated with the amorphous silicon photodiode is presented to significantly improve the ratio of the circuit output current when the diode is illuminated to when it is not. The use of one additional reference source voltage to adjust the operating point of the photodiode, allows to obtain a very significant increase in this current ratio, much higher than what can be obtained using a simple diode. Circuit solutions used to amplify the diode current under illumination are usually more complicated and involve a capacitor or more transistors than the circuit we present. All the other properties of the photodetector, as its spectral characteristic and linear dependence of detection with light intensity are maintained. The circuit can also be used in conjunction with other circuits for further amplification and/or processing, (C) 2002 Elsevier Science Ltd. All rights reserved.
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Estrada, M., Flandre, D., Afzalian, A., Cerdeira, A., Baez, H., & de Lucca, A. (2003). FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si : H photodiode. Microelectronics Reliability, 43(2), 189-193. https://doi.org/10.1016/S0026-2714(02)00288-3 (Original work published 2003)