Extended Theoretical-analysis of the Steady-state Linear Behavior of Accumulation-mode, Long-channel P-mosfets On Soi Substrates

Flandre, Denis;Terao, A.
(1992) Solid-State Electronics — Vol. 35, n° 8, p. 1085-1092 (1992)

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Abstract
The different conduction mechanisms occurring in thin-film accumulation-mode SOI p-channel MOSFETs have been investigated on the basis of experimental measurements and numerical simulations under all possible steady-state conditions with low drain-source voltage. Closed-form expressions for the front-gate threshold voltage as a function of back-gate bias and associated parameters have been derived and found to be in good agreement with measurements. Our extended analysis provides a basic tool which could prove useful for new characterization, modelling or application studies of accumulation-mode SOI MOSFETs.
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Flandre, D., & Terao, A. (1992). Extended Theoretical-analysis of the Steady-state Linear Behavior of Accumulation-mode, Long-channel P-mosfets On Soi Substrates. Solid-State Electronics, 35(8), 1085-1092. https://doi.org/10.1016/0038-1101(92)90009-2 (Original work published 1992)