New experiments on the electrodeposition of iron in porous silicon

Renaux, Christian;Scheuren, V;Flandre, Denis
(1999) Microelectronics Reliability — Vol. 40, n° 4-5, p. 877-879 (2000)

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Abstract
We report here the study about the electrodeposition of iron into porous silicon made in p-type (15-25 Ohm cm) silicon wafers. Chronoamperometry measurements were performed to show that the iron nucleation does not start only at the bottom of the pores, which is confirmed by the high quality SEM images. The energy band of the heterostructure Si/PS is used to explain the mechanisms involved in the electrodeposition of iron and the porous silicon formation. This new structure (iron and porous silicon), once well controlled might have an influence on the new device developments. (C) 2000 Elsevier Science Ltd. All rights reserved.
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Renaux, C., Scheuren, V., & Flandre, D. (1999). New experiments on the electrodeposition of iron in porous silicon. Microelectronics Reliability, 40(4-5), 877-879. https://doi.org/10.1016/S0026-2714(99)00331-5 (Original work published 2000)