Characteristics of Nmos/gaa (gate-all-around) Transistors Near Threshold

Francis, Pascale;Flandre, Denis;Terao, Akira;Vandewiele, Fernand
(1992) Microelectronic Engineering — Vol. 19, n° 1-4, p. 815-818 (1992)

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Authors
  • Francis, PascaleUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
  • Terao, AkiraUCLouvain
    Author
  • Vandewiele, FernandUCLouvain
    Author
Abstract
Simulations of drain current and intrinsic gate capacitances of nMOS/GAA transistors are presented and compared with experimental results. On the basis of the insight they give into the unique behaviour of those devices, new hypotheses have emerged and yielded an analytical model valid around the threshold voltage.
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Francis, P., Flandre, D., Terao, A., & Vandewiele, F. (1992). Characteristics of Nmos/gaa (gate-all-around) Transistors Near Threshold. Microelectronic Engineering, 19(1-4), 815-818. https://doi.org/10.1016/0167-9317(92)90551-2 (Original work published 1992)