Physics and Performance of Accumulation-mode Soi P-mosfets From Low (77 K) To High (150-320-degrees-c) Temperatures
(1992) Microelectronic Engineering — Vol. 19, n° 1-4, p. 803-806 (1992)
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- Abstract
- A theoretical analysis of the physics of accumulation-mode SOI p-MOSFET's is supported by new experimental data at room temperature, then extended to low (77 K) and high (150-320-degrees-C) temperature domains. The electrical performances of these devices under such temperature conditions are discussed and shown to be compatible with circuit requirements.
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Citations
Flandre, D., Terao, A., Loo, T., & Colinge, J.-P. (1992). Physics and Performance of Accumulation-mode Soi P-mosfets From Low (77 K) To High (150-320-degrees-c) Temperatures. Microelectronic Engineering, 19(1-4), 803-806. https://doi.org/10.1016/0167-9317(92)90548-6 (Original work published 1992)