Analog performance and application of graded-channel fully depleted SOI MOSFETs

Pavanello, Marcelo Antonio;Flandre, Denis;Martino, Joao Antonio;Dessard, V.
(2000) Solid-State Electronics — Vol. 44, n° 7, p. 1219-1222 (2000)

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Authors
  • Pavanello, Marcelo AntonioEscola Politécnica da Universidade de São Paulo
    Author
  • Flandre, DenisUCLouvain
    Author
  • Martino, Joao AntonioEscola Politécnica da Universidade de São Paulo
    Author
  • Dessard, V.UCLouvain
    Author
Abstract
The performances of the single-transistor operational transconductance amplifiers (OTAs) implemented using graded-channel (GC) and a conventional fully depleted silicon-on-insulator nMOSFETs are compared. Improvements of the DC gain and unity-gain frequency resulting from the extremely reduced output conductance and the increased transconductance in the GC devices are discussed, based on experimental results, establishing design guidelines in order to aim at GC micropower or wide bandwidth OTAs. (C) 2000 Elsevier Science Ltd. All rights reserved.
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Pavanello, M. A., Flandre, D., Martino, J. A., & Dessard, V. (2000). Analog performance and application of graded-channel fully depleted SOI MOSFETs. Solid-State Electronics, 44(7), 1219-1222. https://doi.org/10.1016/S0038-1101(00)00034-4 (Original work published 2000)