New method for determination of harmonic distortion in SOI FD transistors
(2002) Solid-State Electronics — Vol. 46, n° 1, p. 103-108 (2002)
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- Abstract
- We present a new method for calculating the total harmonic distortion (THID) and the third harmonic distortion (HD3) of the output current-voltage characteristics of a semiconductor device. The method is based on the calculation of two functions which we call D and D3 and are based on a specific integration of the DC current-voltage characteristic of the device. In this paper we demonstrate that function D can be correlated with the THD and function D3 with the HD3, so that they can be determined in a much simpler way, with no need to use derivatives, Fourier coefficients or fast Fourier transforms. The new method is applied to calculate the harmonic distortion of a silicon-on-insulator (Sol) fully depleted (FD) MOS transistor in the triode regime to be used as an active resistor at the input of an operational amplifier in a MOSFET-C filter configuration. It is also demonstrated that the transistor I-DS-V-DS characteristics used in these calculations can be obtained from either measurements, analytical models or numerical simulations. (C) 2002 Elsevier Science Ltd. All rights reserved.
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Cerdeira, A., Flandre, D., Estrada, M., Quintero, R., Ortiz-Conde, A., & Sanchez, F. (2002). New method for determination of harmonic distortion in SOI FD transistors. Solid-State Electronics, 46(1), 103-108. https://doi.org/10.1016/S0038-1101(01)00258-1 (Original work published 2002)