An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics
(2000) Electrochemical and Solid-State Letters — Vol. 3, n° 1, p. 50-52 (2000)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- A device based on an asymmetric channel doping profile with the aim of reducing the inherent parasitic bipolar effects in fully depleted silicon-on-insulator (SOI) devices and improving the output characteristics is introduced. Measurements and two-dimensional simulations are used to study the device capabilities and limitations. (C) 1999 The Electrochemical Society. S1099-0062(99)07-087-X. All rights reserved.
- Affiliations
Citations
Pavanello, M. A., Flandre, D., Martino, J. A., & Dessard, V. (2000). An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics. Electrochemical and Solid-State Letters, 3(1), 50-52. https://doi.org/10.1149/1.1390955 (Original work published 2000)