Local density of states in mesoscopic samples from scanning gate microscopy

Pala, M. G.;Hackens, Benoît;Rodrigues Martins, Frederico;Sellier, H.;Ouisse, T.;et.al.
(2008) Physical review. B, Condensed matter and materials physics — Vol. 77, n° 12 (2008)

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Authors
  • Pala, M. G.
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  • Rodrigues Martins, FredericoUCLouvain
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  • Sellier, H.
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  • Ouisse, T.
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Abstract
We study the relationship between the local density of states (LDOS) and the conductance variation Delta G in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical model showing that in the linear-response regime the conductance shift Delta G is proportional to the Hilbert transform of the LDOS and hence a generalized Kramers-Kronig relation holds between LDOS and Delta G. We analyze the physical conditions for the validity of this relationship both for one-dimensional and two-dimensional systems when several channels contribute to the transport. We focus on realistic Aharonov-Bohm rings including a random distribution of impurities and analyze the LDOS-Delta G correspondence by means of exact numerical simulations, when localized states or semiclassical orbits characterize the wave function of the system.
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Citations

Pala, M. G., Hackens, B., Rodrigues Martins, F., Sellier, H., Bayot, V., Huant, S., & Ouisse, T. (2008). Local density of states in mesoscopic samples from scanning gate microscopy. Physical review. B, Condensed matter and materials physics, 77(12). https://doi.org/10.1103/PhysRevB.77.125310 (Original work published 2008)