Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors
(1996) Electronics Letters — Vol. 32, n° 4, p. 278-279 (1996)
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- Abstract
- The serial-parallel association of SOI MOSFETs proves to be useful for increasing the breakdown voltage and the early voltage of transistor structures. This permits one to realise current mirrors with an output-to-input current ratio close to unity in the weak, moderate and strong inversion regimes of the MOSFETs.
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Deceuster, D., Flandre, D., Colinge, J.-P., & Cristoloveanu, S. (1996). Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors. Electronics Letters, 32(4), 278-279. https://doi.org/10.1049/el:19960252 (Original work published 1996)