P+-p-p+ Pseudo-bipolar Lateral Soi Transistor
(1994) Electronics Letters — Vol. 30, n° 18, p. 1543-1545 (1994)
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- Abstract
- Lateral P+-P-P+ SOI transistors functioning in the hybrid mode (i.e. with body connected to gate) have been tested. Although current transport is solely due to holes, these devices exhibit electrical characteristics which are similar to those of a bipolar transistor. A common-emitter current gain of 1400 is observed in devices having an effective channel (base) length of 1.1 mu m.
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Citations
Colinge, J.-P., Flandre, D., & Deceuster, D. (1994). P+-p-p+ Pseudo-bipolar Lateral Soi Transistor. Electronics Letters, 30(18), 1543-1545. https://doi.org/10.1049/el:19941040 (Original work published 1994)