Demonstration of the Potential of Accumulation-mode Mos-transistors On Soi Substrates for High-temperature Operation (150-300-degrees-c)
(1993) IEEE Electron Device Letters — Vol. 14, n° 1, p. 10-12 (1993)
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- Abstract
- Measurements of accumulation-mode (AM) MOS SOI transistors in the 150-300-degrees-C temperature range are reported and discussed. The increases of the threshold voltage shift and off leakage current with temperature of these SOI p-MOSFET's are observed to be much smaller than their bulk equivalents. Simple models are presented to support the experimental data.
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Citations
Flandre, D., Terao, A., Francis, P., Gentinne, B., & Colinge, JP. (1993). Demonstration of the Potential of Accumulation-mode Mos-transistors On Soi Substrates for High-temperature Operation (150-300-degrees-c). IEEE Electron Device Letters, 14(1), 10-12. https://doi.org/10.1109/55.215084 (Original work published 1993)