High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications

Godignon, P.;Vellvehi, M.;Flores, D.;Millan, J.;Flandre, Denis;et.al.
(2004) Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment — ISBN: [1-4020-3011-8], p. 279-284, published

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Authors
  • Godignon, P.CNM-CSIC
    Author
  • Vellvehi, M.CNM-CSIC
    Author
  • Flores, D.CNM-CSIC
    Author
  • Millan, J.CNM-CSIC
    Author
  • Moreno Hagelsieb, LuisUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Scientific Director/Editor
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Abstract
The goal of this work is to explore different ways for co-integrating a power DMOS device in the bulk Si-substrate which underlies the SOI buried oxide and thin Si overlayer, providing optimal performance and isolation of both kinds of devices. A first phase has consisted of the design and fabrication of a power DMOS, defining and optimising 3 mixed DMOS/SOI-CMOS process based on existing power VDMOS and FD SOI CMOS technologies. 150V power VDMOS have been fabricated. One of these process clearly gives better results than the other two proposed technologies. The compatibility of both power VDMOS devices and SOI circuitry is then demonstrated.
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Godignon, P., Vellvehi, M., Flores, D., Millan, J., & Moreno Hagelsieb, L. (2004). High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications. In D. Flandre, A.N. Nazarov, P.L.F. Hemment (ed.), Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment (p. p. 279-284). Kluwer Academic Publishers. https://hdl.handle.net/2078.5/70335