Extraction of Physical Device Dimensions of Soi Mosfets From Gate Capacitance Measurements
(1993) Electronics Letters — Vol. 29, n° 7, p. 586-588 (1993)
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- Abstract
- A new technique unique to SOI MOSFETs is presented for extracting the physical device dimensions (effective gate length and gate oxide and film thicknesses) from a set of gate capacitance measurements on transistors with various lengths.
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Citations
Flandre, D., & Gentinne, B. (1993). Extraction of Physical Device Dimensions of Soi Mosfets From Gate Capacitance Measurements. Electronics Letters, 29(7), 586-588. https://doi.org/10.1049/el:19930393 (Original work published 1993)