On the high-temperature subthreshold slope of thin-film SOI MOSFETs
(2002) IEEE Electron Device Letters — Vol. 23, n° 3, p. 148-150 (2002)
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- Abstract
- This paper addresses the validity of the classical expression for the subthreshold swing (S) in SOI metal-oxide semiconductor field effect transistors (MOSFETs) at high temperature. Using numerical simulation it is shown that two effects invalidate the classical expression of S at high temperature. Firstly, the depletion approximation becomes invalid and intrinsic free carriers must be taken into account to determine the effective body capacitance. Secondly, the charge-sheet model for the inversion layer becomes inaccurate due to a lowering of the surface electric field at the surface and a broadening of the inversion layer thickness in weak inversion. These effects must be taken into account to predict accurately the high-temperature subthreshold characteristics of both partially depleted and fully depleted SOI MOSFETs.
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Rudenko, T., Flandre, D., Kilchytska, V., Colinge, J.-P., & Dessard, V. (2002). On the high-temperature subthreshold slope of thin-film SOI MOSFETs. IEEE Electron Device Letters, 23(3), 148-150. https://doi.org/10.1109/55.988820 (Original work published 2002)