Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs
(2006) IEEE Electron Device Letters — Vol. 27, n° 2, p. 123-126 (2006)
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- Abstract
- A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs is reported. It is found that the drain current becomes abnormally large for specific front- and back-gate voltages. The drain current exhibits a transient effect due to the floating body behavior and no longer follows the conventional interface coupling theory for these specific front- and back-gate bias conditions. It is shown that the ADC can be generated by the combination of gate-induced drain leakage, transient effects, and parasitic bipolar transistor action in FD SOI MOSFETs.
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Citations
Yun, J., Flandre, D., Cristoloveanu, S., Bawedin, M., & Lee, H. (2006). Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs. IEEE Electron Device Letters, 27(2), 123-126. https://doi.org/10.1109/LED.2005.862684 (Original work published 2006)