Tunnel junction engineering for optimized metallic single-electron transistor
(2015) IEEE Transactions on Electron Devices — Vol. 62, n° 9, p. 2998-3003 (2015)
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- Abstract
- The development of metallic single-electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions (TJs). These TJs should insure high-ON current, low-OFF current, and low capacitance. We propose an engineered TJ based on multidielectric stacking. A number of high-k and low-k materials were considered to optimize the TJ's characteristics. The optimized TJ is proven to increase the ION current and the ION/IOFF ratio in a double-gate SET. Using TiO2 plasma oxidation and Al2O3 atomic layer deposition, an SET proof of concept, with a double layer TJ, was fabricated and characterized.
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Citations
El Hajjam, K. G., Bounouar, M. A., Baboux, N., Ecoffey, S., Guilmain, M., Puyoo, E., Francis, L., Souifi, A., Drouin, D., & Calmon, F. (2015). Tunnel junction engineering for optimized metallic single-electron transistor. IEEE Transactions on Electron Devices, 62(9), 2998-3003. https://doi.org/10.1109/TED.2015.2452575 (Original work published 2015)