Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures

Kilchytska, Valeriya;Flandre, Denis;Collaert, Nadine;Jurczak, Malgorzata
(2007) Solid-State Electronics — Vol. 51, n° 9, p. 1185-1193 (2007)

Files

pdfdocument.pdf
  • Restricted Access
  • Adobe PDF
  • 240.77 KB
Request a copy

Details

Authors
Abstract
In this paper specific features of the multiple-gate MOSFETs (MuGFETs) behavior at high temperatures (up to 300 degrees C) are analyzed through measurements, 2D simulations and analytical models of long-channel transistors. The high-temperature evolutions of threshold voltage and subthreshold slope are discussed paying particular attention to the influence of Si film thinning. High-temperature behavior of the threshold voltage and subthreshold slope in MuGFETs is demonstrated, for the first time, to be different from those generally considered for FD SOI MOSFETs. It is shown that the threshold voltage shift with temperature is strongly attenuated in MuGFETs and further decreases with Si film thinning. Then, the deviation of the MuGFET subthreshold slope at high temperatures from the expected ideal linear temperature dependence is analyzed and the possible reasons are discussed. (c) 2007 Elsevier Ltd. All rights reserved.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Kilchytska, V., Flandre, D., Collaert, N., & Jurczak, M. (2007). Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures. Solid-State Electronics, 51(9), 1185-1193. https://doi.org/10.1016/j.sse.2007.07.020 (Original work published 2007)