Fully depleted SOI-CMOS technology for high temperature IC applications
(1997) Materials Science and Engineering B: Solid-State Materials for Advanced Technology — Vol. 46, n° 1-3, p. 1-7 (1997)
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- Thin-film fully depleted complementary metal oxide semiconductor (CMOS) silicon-on-insulator (SOI) technology is currentlly considered as the best mature contender for high-temperature analog or mixed-mode IC applications in the 200-400 degrees C temperature range. This is demonstrated by measurement results of the high-temperature performances of several operational transconductance amplifiers (OTA) with increasing architecture complexity. High-temperature design techniques are also proposed and validated by measurements. (C) 1997 Elsevier Science S.A.
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Citations
Gentinne, B., Eggermont, J.-P., Flandre, D., & Colinge, J.-P. (1997). Fully depleted SOI-CMOS technology for high temperature IC applications. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 46(1-3), 1-7. https://doi.org/10.1016/S0921-5107(96)01921-6 (Original work published 1997)