Subthreshold Slope of Long-channel, Accumulation-mode P-channel Soi Mosfets

Colinge, Jean-Pierre;Flandre, Denis;Vandewiele, Fernand
(1994) Solid-State Electronics — Vol. 37, n° 2, p. 289-294 (1994)

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Authors
  • Colinge, Jean-PierreUCLouvain
    Author
  • Flandre, DenisUCLouvain
    Author
  • Vandewiele, FernandUCLouvain
    Author
Abstract
An analytical model for the subthreshold slope of the accumulation-mode p-channeI SOI MOSFET is developed. The exact solution of the equations reveals that the subthreshold swing is slightly larger (by a few percent) than that of enhancement (inversion-mode) fully depleted SOI devices. In most cases, however, the classical subthreshold slope expression developed for inversion-mode fully depleted SOI MOSFET can be used as a good approximation for accumulation-mode devices, which means that the subthreshoId swing tends to the ideal value of S-0 = kT/q 1n(10) mV/dec if the buried oxide is sufficiently thick and if the interface trap density is sufficiently low.
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Colinge, J.-P., Flandre, D., & Vandewiele, F. (1994). Subthreshold Slope of Long-channel, Accumulation-mode P-channel Soi Mosfets. Solid-State Electronics, 37(2), 289-294. https://doi.org/10.1016/0038-1101(94)90080-9 (Original work published 1994)