Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices
(2006) Physical review. B, Condensed matter and materials physics — Vol. 73, n° 19, p. 195318 (2006)
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- We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.
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Marlow, C. A., Taylor, R. P., Martin, T., Scannell, B. C., Linke, H., Fairbanks, M. S., Hall, G. D. R., Shorubalko, I., Samuelson, L., Fromhold, T. M., Brown, C. V., Hackens, B., Faniel, S., Gustin, C., Bayot, V., Wallart, X., Bollaert, S., & Cappy, A. (2006). Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices. Physical review. B, Condensed matter and materials physics, 73(19), 195318. https://doi.org/10.1103/PhysRevB.73.195318 (Original work published 2006)