Deep-submicron DC to RF SOI MOSFET characterization and modelling
(1999) 1999 International Semiconductor device research Symposium — Location: Charlottesville (USA) (8.December.1999)
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Iniguez, B., Demeûs, L., Nève, A., Flandre, D., D’Hayer, S., Simon, P., Vanhoenacker-Janvier, D., & Raynaud, C. (1999). Deep-submicron DC to RF SOI MOSFET characterization and modelling. Proceedings of the 1999 International Semiconductor device research Symposium, 441-444. https://hdl.handle.net/2078.5/275591