Electrical Evolution of p-Type SnO Film and Transistor Deposited by RF Magnetron Sputtering
(2023) IEEE Transactions on Electron Devices — Vol. 70, n° 6, p. 3100-3105 (2023)
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Electrical_Evolution_of_p-Type_SnOx_Film_and_Transistor_Deposited_by_RF_Magnetron_Sputtering.pdf
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- In this work, by altering oxygen partial pressure (OPP) and sputtering power ( ) of the radio frequency (RF) magnetron sputtering process, we investigate electrical evolution of the p-type SnO film and transistor. Herein, combining device current–voltage (such as ON-state current and field-effect mobility), low-frequency noise (LFN), and gate-bias-stress characteristics, we find that the optimal OPP range is 4.8%–7.2% for the SnO film deposition at of 70 and 30 W. Based on X-ray photoelectron spectroscopy (XPS), the SnO films deposited at high power (70 W) show less sensitivity to OPP, which leads to the slow transition of internal Sn , Sn states, and a relatively large process window. Furthermore, the defect states inside the SnO are analyzed. The oxygen interstitials (O ), as deep acceptors, keep inactive regardless of the external bias. The oxygen vacancies (Vo) and the ionized Vo states …
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Zhou, Y., Song, Y., Hong, R., Liu, X., Zou, X., Iniguez, B., Flandre, D., Li, G., & Liao, L. (2023). Electrical Evolution of p-Type SnO Film and Transistor Deposited by RF Magnetron Sputtering. IEEE Transactions on Electron Devices, 70(6), 3100-3105. https://hdl.handle.net/2078.5/27374 (Original work published 2023)