Enhanced Ultraviolet Avalanche Photodiode With 640-nm-Thin Silicon Body Based on SOI Technology
(2020) IEEE Transactions on Electron Devices — Vol. 67, n° 11, p. p. 4641 - 4644 (2020)
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EnhancedUltravioletAvalanchePhotodiodeWith640-nm-ThinSiliconBodyBasedonSOITechnology.pdf
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Sabri Alirezaei, I., André, N., & Flandre, D. (2020). Enhanced Ultraviolet Avalanche Photodiode With 640-nm-Thin Silicon Body Based on SOI Technology. IEEE Transactions on Electron Devices, 67(11), p. 4641 - 4644. https://doi.org/10.1109/TED.2020.3017699 (Original work published 2020)