High Temperature SOI CMOS Low Power circuits and micro systems for MEMS co-integrated interfaces, temperature sensing and power management applications

Rue, Bertrand;André, Nicolas;Olbrechts, Benoit;Gosset, Geoffroy;Flandre, Denis;et.al.
(2009) International Collaborative Aerospace Development Micro Natnotechnologies: From concepts to systems – CANEUS 2009 — Location: NASA Ames Research Center, CA, USA (1.March.2009)

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Abstract
Silicon-on-Insulator (SOI) technology allows efficient co-integration of MEMS with CMOS for high temperature low power performances. Firstly, ring oscillators are used to measure the capacitance variations of out of plane (3D) movable cantilevers for temperature or flow monitoring, as well as stress variations in a dielectric membrane under static and dynamic pressure stimuli. Secondly, low power SOI CMOS circuits and micro systems are discussed. Circuits for power management are demonstrated: a very efficient half-wave rectifier for piezoelectric or RFID powering systems and an Ultra Low Power voltage reference are demonstrated as well as a low power high temperature sensor based on a PIN diode with digital output is shown. All these circuits keep very good performances up to 250C-300C.
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Rue, B., André, N., Olbrechts, B., Gosset, G., Raskin, J.-P., & Flandre, D. (2009). High Temperature SOI CMOS Low Power circuits and micro systems for MEMS co-integrated interfaces, temperature sensing and power management applications. Proceedings of the International Collaborative Aerospace Development Micro Natnotechnologies: From concepts to systems – CANEUS 2009, p. Panel Session P10: Low TRL Devices (Sensors and Instrumentation). https://hdl.handle.net/2078.5/272214