Ultra Low Power 3-D Flow Meter in Monolithic SOI Technology
(2011) Journal of the Electrochemical Society — Vol. 35, n° 5, p. 319-324 (2011)
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- Abstract
- Silicon-on-Insulator technology, with unique properties such as harsh environment resistance and lower power consumption, is presented here as a platform for CMOS and MEMS co-integration. An original CMOS-compatible process has been developed for the design and the co-fabrication of out-of-plane movable cantilevers and ring oscillators circuits on the same chip. The measured transducer, by deflection of the out-of-plane MEMS component, shows until 10% variation of the frequency under different flow rates.
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Citations
André, N., Rue, B., Scheen, G., Francis, L., Flandre, D., & Raskin, J.-P. (2011). Ultra Low Power 3-D Flow Meter in Monolithic SOI Technology. Journal of the Electrochemical Society, 35(5), 319-324. https://doi.org/10.1149/1.3570812 (Original work published 2011)