Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C

Amor, Sedki;André, Nicolas;Gérard, Pierre;Ali, S.Z.;Flandre, Denis;et.al.
(2017) Semiconductor Science and Technology — Vol. 32, n° 1, p. 9 (2016)

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Abstract
In this work we investigate the characteristics and critical operating temperatures of on-membrane embedded MOSFETs from an experimental and analytical point of view. This study permits us to conclude the possibility of integrating electronic circuitry in the close vicinity of micro-heaters and hot operation transducers. A series of calibrations and measurements has been performed to examine the behaviors of transistors, inverters and diodes, actuated at high temperature, on a membrane equipped with an on-chip integrated micro-heater. The studied n- and p-channel body-tied partially-depleted MOSFETs and CMOS inverter are embedded in a 5 μm-thick membrane fabricated by back-side MEMS micromachining using SOI technology. It has been noted that a pre-stabilization step after the harsh post-CMOS processing, through an in situ high-temperature annealing using the micro-heater, is mandatory in order to stabilize the MOSFETs characteristics. The electrical characteristics and performance of the on-membrane MOS components are discussed when heated up to 335 °C. This study supports the possibility of extending the potential of the micro-hotplate concept, under certain conditions, by embedding more electronic functionalities on the interface of on-membrane-based sensors leading to better sensing and actuation performances and a total area reduction, particularly for environmental or industrial applications.
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Amor, S., André, N., Gérard, P., Ali, S. Z., Udrea, F., Tounsi, F., Mezghani, B., Francis, L., & Flandre, D. (2017). Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C. Semiconductor Science and Technology, 32(1), 9. https://doi.org/10.1088/1361-6641/32/1/014001 (Original work published 2016)