Magnetic sensors enabled by MEMS and SOI technologies
(2012) CMOS Emerging Technologies Conference — Location: Vancouver (Canada) (18.July.2012)
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- Abstract
- The size and power reduction of magnetic sensors is attractive for portzble applications. Hall effect, Anisotropic MagnetoResistance and Giant Magnetoresistance sensors have a limited bandwidth, a power in the mW range and require integrating magnetic materials. In this paper, we will show that MEMS and Silicon-on-Insulator are key technologies for the co-integration of magnetic sensing with dedicated CMOS circuit interfaces operating in the µm range. We will discuss and illustrate different strategies for the measurement of magnetic fields, i.e. split-drain thin-film SOI transistors, microcoil indusctors with low power CMOS interface, out-of-plane MEMS and SOIMUMPs devices based on Lorentz's force actuation and piezoresistive or capacitive detection.
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Citations
Francis, L., Druart, S., André, N., Gkotsis, P., Flandre, D., & Raskin, J.-P. (2012). Magnetic sensors enabled by MEMS and SOI technologies. Proceedings of the CMOS Emerging Technologies Conference. Published. CMOS Emerging Technologies Conference, Vancouver (Canada). https://hdl.handle.net/2078.5/272179