Operation of suspended lateral SOI PIN photodiode with aluminium back gate

Li, Guoli;André, Nicolas;Poncelet, Olivier;Gérard, Pierre;Flandre, Denis;et.al.
(2016) 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016) — Location: Vienne (Austria) (25.January.2016)

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Abstract
Int his paper, we report a lateral silicon-on-insulator (SOI) P+P-N+ (PIN) photodiode suspended on a microhotplate platform, with aluminium (Al) layer deposited on backside. Voltage applied to the Al gate can modify the depletion condition in the intrinsic (I) region. The device output photocurrent reaches a maximum under fully-depleted (FD) condition achieved by the positive back-gate bias. Moreover, the backside Al acts as a excellent reflector, which for specific wavelength ranges (around 500, 600, 770 nm) significantly boosts optical response of the SOI PIN photodiode. Over 2~3x improvements of responsivity (up to R = 0.1 A/W at 590 nm) have been achieved and validated in the measurements at 490, 590, 760 nm. Full optoelectronic two-dimensional (2-D) device simulations are conducted in Atlas software to comprehensively validate the device performance and improvement.
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Li, G., André, N., Poncelet, O., Gérard, P., Zeeshan Ali, S., Udrea, F., Francis, L., Zeng, Y., & Flandre, D. (2016). Operation of suspended lateral SOI PIN photodiode with aluminium back gate. Proceedings de la conférence EUROSOI-ULIS 2016, 155-158. https://doi.org/10.1109/ULIS.2016.7440076