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Abstract
This paper reports on the performances of a silicon-on-insulator (SOI) photodiode suspended on a dielectric membrane. The micro-hotplate platform consists of a micro-heater and a thin-film lateral P+/P-/N+ (PIN) photodiode. Without optimizing the multilayer stack on top of the PIN diode, experimental responsivities of the suspended photodiodes at room temperature (RT) are 0.02-0.06 A/W within the visible and near IR light range, under a reverse bias of -2.0 V. Up to 2.5x responsivity improvement has been achieved with regards to the diodes on the substrate thanks to reflection from the gold finish layer of the device package acting as a bottom mirror. Optimizing the layer stack above the diode, the responsivity of the on-membrane device can be theoretically improved up to 0.09-0.11 A/W within 450-520 nm wavelength range. Measured from RT up to 200 °C, the photodiodes on membrane continuously show improved optical response under high-power LED illumination. Assisted by the micro-heater as heat source, the suspended photodiode can work stably up to 200 °C with in-situ temperature sensing and control, which makes it highly suitable and attractive for high-temperature application. Full two-dimensional (2-D) ATLAS device simulations have been comprehensively performed to investigate the optical and electrical characteristics. Very good agreement has been achieved between the numerical simulations and the experimental data.
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Li, G., André, N., Poncelet, O., Gérard, P., Ali, S. Z., Udrea, F., Francis, L., Zeng, Y., & Flandre, D. (2016). Silicon-on-Insulator Photodiode on Micro-Hotplate Platform with Improved Responsivity and High-Temperature Application. IEEE Sensors Journal, PP(99), 9. https://doi.org/10.1109/JSEN.2016.2530020 (Original work published 2016)