In this paper, the performances of two sensors based on the same micro-machined silicon-on-insulator (SOI) suspended platform [1] are reported. Our motivation is to develop a low cost, low power and reliable sensor with integrated electronics interface for applications from ambient to 200 °C. The first sensor is a humidity sensor based on coated electrodes embedded with its own temperature sensor. It exploits an atomic layer deposited 25 nm-thick Al2O3 coating, in opposite to conventional polymer-based humidity sensors. The %RH variations are transduced into capacitance then converted to oscillating voltage period variations with a 200 μW low power consumption. At 25 °C, the sensitivity to humidity is equal to ~2.5%/%RH [2]. The frequency output shows ±2% %RH level accuracy. This sensing micro-system was successfully tested up to 150 °C. The second sensor is a suspended photodiode with a lateral silicon-on-insulator P+PN+(PIN) diode. The gold bottom of ceramic packages acts as a back mirror and gives a global better responsivity up to 2.5× responsivity for specific wavelengths around 500, 600, 750 nm [3]. The photodiode can work up to 200 °C, with in-situ temperature sensing and control.