Micrometer-thin SOI Sensors for E-Skin Applications
(2020) 2020 IEEE SENSORS — Location: Rotterdam (the Netherlands) (25.October.2020)
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- Abstract
- Ultra-thin silicon-on-insulator-based sensors are presented, featuring a thickness of less than 20 μm, as new integrable items for wearable physical and physiological ultralow- power applications. Depending on the Si thickness, the back contact realization and the bias conditions, they can be optimized for thermal sensing or optical sensing in the UV-VIS light band. A lateral PIN diode with a transparent graphene back gate shows a maximum responsivity of 0.18 A/W at 390 nm wavelength, and a high sensitivity of ∼2.28 mV/°C at fixed 0.01 μA low bias current, whereas a vertical PN strip diode with an Al back contact extends the optical responsivity to the visible range (with e.g. 0.24 A/W at 555nm wavelength when biased at -2 V) and achieves a high-temperature sensitivity using constant reverse voltage method.
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Citations
Wei, P., André, N., Zeng, X., Sabri Alirezaei, I., Li, G., Bouterfa, M., Francis, L., & Flandre, D. (2020). Micrometer-thin SOI Sensors for E-Skin Applications. IEEE Sensors. Proceedings. 2020 IEEE SENSORS, Rotterdam (the Netherlands). https://doi.org/10.1109/SENSORS47125.2020.9278716 (Original work published 2020)