Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Sibased photodiode
(2019) Journal of Physics D: Applied Physics — Vol. 52, n° 24, p. 7 (2019)
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- We present an ultra-thin lateral SOI PIN photodiode with transferred monolayer graphene as the transparent gate, to provide enhanced ultraviolet (UV) performance and mechanical flexibility beyond standard Si-based devices. The device dark current shows intact characteristics after the post-CMOS thinning and graphene transfer processing steps. The device responsivity presents high potential in UV and visible wavelength detections (i.e. within the 200–900nm range) under monochromatic light illumination. A maximum responsivity of 0.18 A W−1 has been experimentally achieved at 390nm wavelength and validated by simulation, for a diode with intrinsic length Li of 20 μm. Additionally, the ~5 μm-thick device chip with direct board assembly paves the way towards the development of hybrid flexible electronics.
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Li, G., André, N., Huet, B., Delhaye, T., Reckinger, N., Francis, L., Lioa, L., Raskin, J.-P., Zeng, Y., & Flandre, D. (2019). Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Sibased photodiode. Journal of Physics D: Applied Physics, 52(24), 7. https://doi.org/10.1088/1361-6463/ab12b8 (Original work published 2019)