Improving MOSFET Piezoresistive Strain Gauges Limit of Detection Using Lock-In PrincipleDelhaye, Thibault;Roisin, Nicolas;André, Nicolas;Francis, Laurent;Flandre, Denis(2021) IEEE Sensors 2021 — Location: virtual conference (31.October.2021)
FilesImprovingMOSFETPiezoresistiveStrainGaugesLimitofDetectionUsingLock-InPrinciple.pdf Open Access Adobe PDF2.2 MBDownloadDetailsAuthorsDelhaye, ThibaultUCLouvainAuthorRoisin, NicolasUCLouvainAuthorAndré, NicolasUCLouvainAuthorFrancis, LaurentUCLouvainAuthorFlandre, DenisUCLouvainAuthorAffiliationsUCLouvainSST/ICTM/ELEN - Pôle en ingénierie électriqueShow moreCitations APA Chicago FWB Delhaye, T., Roisin, N., André, N., Francis, L., & Flandre, D. (2021). Improving MOSFET Piezoresistive Strain Gauges Limit of Detection Using Lock-In Principle. Proceedings of the IEEE Sensors 2021. IEEE Sensors 2021, virtual conference. https://hdl.handle.net/2078.5/272121