Silicon-on-insulator Technology for High-temperature Metal-oxide-semiconductor Devices and Circuits

Flandre, Denis
(1995) European-Materials-Research-Society 1994 Spring Meeting, Symposium E; High Temperature Electronics - Materials, Devices and Applications — Location: STRASBOURG (France) (24.May.1994)

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The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 degrees C.
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Flandre, D. (1995). Silicon-on-insulator Technology for High-temperature Metal-oxide-semiconductor Devices and Circuits. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 29(1-3), 7-12. https://hdl.handle.net/2078.5/271846 (Original work published 1995)