Flash lamp annealing of Cu(In1–xGax)SSe films deposited on polyimide substrate: Crystalline structure and chemical composition
(2025) Fizika Napivprovidnikiv Kvantova ta Optoelektronika — Vol. 28, n° 2, p. 232-238 (2025)
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- Abstract
- In this paper, the effect of sub-millisecond range flash lamp annealing (FLA) on the microstructural and chemical composition of copper indium gallium selenide sulfide (CIGSS) films deposited at low temperature (below 350 °C) on flexible polyimide was studied. The results of scanning electron microscopy (SEM), X-ray diffraction (XRD), and micro-Raman spectroscopy indicate that flash lamp annealing leads to a more homogeneous polycrystalline structure and reduces the defect concentration in the CIGSS layer. Additionally, energy-dispersive X-ray spectroscopic (EDS) measurements show that copper concentration slightly increases, with a slight decrease in the concentration of Ga and In
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Tyagulski, I. P., Gudymenko, O. Yo., Rusavsky, A. V., Tiagulskyi, S. I., Flandre, D., & et al. (2025). Flash lamp annealing of Cu(In1–xGax)SSe films deposited on polyimide substrate: Crystalline structure and chemical composition. Fizika Napivprovidnikiv Kvantova ta Optoelektronika, 28(2), 232-238. https://doi.org/10.15407/spqeo28.02.232 (Original work published 2025)